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ManualsBrandsVishay ManualsOpto- & Photo CouplersOptocoupler DIP-16 70 V

K817P/ K827PH/ K847PH

Vishay Semiconductors

1 (9)

www.vishay.comDocument Number 83522

Rev. A3, 04–Sep–01

Optocoupler with Phototransistor Output

Description

The K817P/ K827PH/ K847PH consist of a photo-

transistor optically coupled to a gallium arsenide

infrared-emitting diode in an 4-lead up to 16 lead

plastic dual inline package.

The elements are mounted on one leadframe using a

coplanar technique, providing a fixed distance

between input and output for highest safety

requirements.

Applications

Programmable logic controllers, modems, answering

machines, general applications

Features

 Endstackable to 2.54 mm (0.1”) spacing

 DC isolation test voltage V

= 5 kV

 Low coupling capacitance of typical 0.3 pF

 Current Transfer Ratio (CTR) selected into groups

 Low temperature coefficient of CTR

 Wide ambient temperature range

 Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

 CSA (C-UL) 1577 recognized,

file number E- 76222 - Double Protection

 Coupling System U

14925

13929

Coll. Emitter

Anode Cath.

4 PIN

8 PIN

16 PIN

Order Instruction

Ordering Code CTR Ranking Remarks

K817P 50 to 600% 4 Pin = Single channel

K827PH 50 to 600% 8 Pin = Dual channel

K847PH 50 to 600% 16 Pin = Quad channel

K817P1 40 to 80% 4 Pin = Single channel

K817P2 63 to 125% 4 Pin = Single channel

K817P3 100 to 200% 4 Pin = Single channel

K817P4 160 to 320% 4 Pin = Single channel

K817P5 50 to 150% 4 Pin = Single channel

K817P6 100 to 300% 4 Pin = Single channel

K817P7 80 to 160% 4 Pin = Single channel

K817P8 130 to 260% 4 Pin = Single channel

K817P9 200 to 400% 4 Pin = Single channel

Summary of content (10 pages)

PAGE 1
K817P/ K827PH/ K847PH Vishay Semiconductors Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
PAGE 2
K817P/ K827PH/ K847PH Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp 10 µs Tamb 25°C Symbol VR IF IFSM PV Tj Value 6 60 1.
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K817P/ K827PH/ K847PH Vishay Semiconductors Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 100 µA IE = 100 µA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 100 Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.
PAGE 4
K817P/ K827PH/ K847PH Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) Symbol td tr tf ts ton toff ton toff VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 2) Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 +5V IF 96 11698 IC = 2 mA; adjusted through input amplitude IF 0 RG = 50 tp = 0.
PAGE 5
K817P/ K827PH/ K847PH Vishay Semiconductors Typical Characteristics (Tamb = 25 C, unless otherwise specified) 10000 300 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 Tamb – Ambient Temperature ( °C ) 96 11700 0 120 Figure 4. Total Power Dissipation vs. Ambient Temperature IC – Collector Current ( mA ) I F – Forward Current ( mA ) 10.0 1.0 0.
PAGE 6
K817P/ K827PH/ K847PH 1.0 ton / t off – Turn on / Turn off Time ( s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 0 Saturated Operation VS=5V RL=1k 40 30 toff 20 10 ton 0 1 100 10 0 IC – Collector Current ( mA ) 95 11028 5 10 15 20 IF – Forward Current ( mA ) 95 11031 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Turn on / off Time vs.
PAGE 7
K817P/ K827PH/ K847PH Vishay Semiconductors Dimensions of K817P. in mm 14789 Dimensions of K827PH in mm 14784 Document Number 83522 Rev. A3, 04–Sep–01 www.vishay.
PAGE 8
K817P/ K827PH/ K847PH Vishay Semiconductors Dimensions of K847PH in mm 14783 www.vishay.com 8 (9) Document Number 83522 Rev.
PAGE 9
K817P/ K827PH/ K847PH Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
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