Datasheet

ManualsBrandsVishay ManualsDiodesSchottky Diode Surface Mount 150mA 100V SOD-80

LL46

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Vishay Semiconductors

Rev. 1.7, 01-Jun-17

Document Number: 85673

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, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diode

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MECHANICAL DATA

Case: MiniMELF (SOD-80)

Weight: approx. 31 mg

Cathode band color: black

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/2.5K per 7" reel (8 mm tape), 12.5K/box

FEATURES

• For general purpose applications

• This diode features low turn-on voltage and high

break-down voltage. This device is protected by

a PN junction guardring against excessive

voltage, such as electrostatic discharges

• This diode is also available in the DO-35

(DO-204AH) case with type designation BAT46 and in the

SOD-123 case with type designation BAT46W-V

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

(1)

Valid provided that electrodes are kept at ambient temperature

Note

(1)

Valid provided that electrodes are kept at ambient temperature

Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS

LL46 LL46-GS18 or LL46-GS08 Single - Tape and reel

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Repetitive peak reverse voltage V

RRM

100 V

Forward continuous current

(1)

150 mA

Repetitive peak forward current

(1)

< 1 s, δ < 0.5 I

FRM

350 mA

Surge forward current

(1)

= 10 ms I

FSM

750 mA

Power dissipation

(1)

amb

= 80 °C P

tot

200 mW

THERMAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air

(1)

thJA

300 K/W

Junction temperature T

125 °C

Ambient operating temperature range T

amb

-55 to +125 °C

Storage temperature range T

stg

-65 to +150 °C

Summary of content (4 pages)

PAGE 1
LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high break-down voltage.
PAGE 2
LL46 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 100 Leakage current (1) MAX. UNIT V VR = 1.5 V IR 0.5 VR = 1.5 V, Tj = 60 °C IR 5 μA VR = 10 V IR 0.8 μA VR = 10 V, Tj = 60 °C IR 7.5 μA VR = 50 V IR 2 μA VR = 50 V, Tj = 60 °C IR 15 μA VR = 75 V IR 5 μA VR = 75 V, Tj = 60 °C IR 20 μA IF = 0.
PAGE 3
LL46 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80) 1.6 (0.063) 1.4 (0.055) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 5 (0.197) ref. 96 12070 Rev. 1.
PAGE 4
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