Datasheet

LL46
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 01-Jun-17
2
Document Number: 85673
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Note
(1)
Pulse test t
p
< 300 μs, δ < 2 %
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Instantaneous Forward Characteristics
Fig. 2 - Typical Reverse Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
100 V
Leakage current
(1)
V
R
= 1.5 V I
R
0.5 μA
V
R
= 1.5 V, T
j
= 60 °C I
R
5μA
V
R
= 10 V I
R
0.8 μA
V
R
= 10 V, T
j
= 60 °C I
R
7.5 μA
V
R
= 50 V I
R
2μA
V
R
= 50 V, T
j
= 60 °C I
R
15 μA
V
R
= 75 V I
R
5μA
V
R
= 75 V, T
j
= 60 °C I
R
20 μA
Forward voltage
(1)
I
F
= 0.1 mA V
F
250 mV
I
F
= 10 mA V
F
450 mV
I
F
= 250 mA V
F
1000 mV
Diode capacitance
V
R
= 0 V, f = 1 MHz C
D
10 pF
V
R
= 1 V, f = 1 MHz C
D
6pF
I - Forward Current (mA)
F
1000
100
10
1
0.1
0.01
1.2 1 0.8 0.6 0.4 0.2 0
18546
V
F
- Forward Voltage (V)
= 60 °CT
j
25 °C
18547
I - Reverse Leakage Current (µA)
R
0.01
0.1
1
10
100
020406080100
V
R
- Reverse Voltage (V)
T
j
= 60 °C
T
j
= 25 °C
0
50
100
150
200
250
0 20 40 60 80 100 120 140
P
tot
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
20081