Datasheet

MBR15xxCT, MBRF15xxCT, MBRB15xxCT
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-14
1
Document Number: 88670
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Dual Common Cathode Schottky Rectifier
FEATURES
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 7.5 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.57 V, 0.65 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Dual Common Cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15xxCT
ITO-220AB
MBRB15xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15xxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60
VWorking peak reverse voltage V
RWM
35 45 50 60
Maximum DC blocking voltage V
DC
35 45 50 60
Maximum average forward rectified current
at T
C
= 105 °C
total device
I
F(AV)
15
A
per diode 7.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
Peak repetitive reverse surge current per diode
at t
p
= 2.0 μs, 1 kHz
I
RRM
1.0 0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
- 65 to + 150
°C
Storage temperature range T
STG
- 65 to + 175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V

Summary of content (5 pages)