Datasheet
MBR15xxCT, MBRF15xxCT, MBRB15xxCT
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-14
1
Document Number: 88670
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Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 7.5 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.57 V, 0.65 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Dual Common Cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15xxCT
ITO-220AB
MBRB15xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15xxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60
VWorking peak reverse voltage V
RWM
35 45 50 60
Maximum DC blocking voltage V
DC
35 45 50 60
Maximum average forward rectified current
at T
C
= 105 °C
total device
I
F(AV)
15
A
per diode 7.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
Peak repetitive reverse surge current per diode
at t
p
= 2.0 μs, 1 kHz
I
RRM
1.0 0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
- 65 to + 150
°C
Storage temperature range T
STG
- 65 to + 175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V