Datasheet

MBR1090CT-E3, MBR10100CT-E3
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Vishay General Semiconductor
Revision: 10-May-16
2
Document Number: 89125
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Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width  40 ms

RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT UNIT
Maximum instantaneous forward voltage per diode
I
F
= 5.0 A T
C
= 125 °C
V
F
(1)
0.75
V
I
F
= 5.0 A T
C
= 25 °C 0.85
Maximum reverse current per diode at working peak
reverse voltage
T
J
= 25 °C
I
R
(2)
100 μA
T
J
= 100 °C 6.0 mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Typical thermal resistance per diode R
JC
4.4 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube
0
2
4
6
10
0
50
100
150
8
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
0
20
60
40
100
80
120
1
100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
01 562
4.0
3.5
3.0
2.5
1.0
0.5
0
2.0
1.5
34
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.8
D = 0.5
D = 1.0
D = t
p
/T t
p
T