Datasheet

MBR1090CT-E3, MBR10100CT-E3
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Vishay General Semiconductor
Revision: 10-May-16
3
Document Number: 89125
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Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
0 0.2 1.60.4
100
10
0.1
1
0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.01
0.001
0.1
1
10
100
0.0001
200 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
101 100
100
1000
10 000
0.1
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
0.01
10 1001
10
0.1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case