Datasheet
MBR10xx, MBRF10xx, MBRB10xx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Jan-14
3
Document Number: 88669
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
2
4
6
8
10
12
0
MBR1035, MBR1045
MBR1050, MBR1060
Average Forward Current (A)
0 50 100 150
Case Temperature (°C)
Resistive or Inductive Load
0.1
1
10
100
25
50
75
125
150
175
100
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
MBR1035, MBR1045
MBR1050, MBR1060
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantenous Reverse Current (mA)
MBR1035, MBR1045
MBR1050, MBR1060
0.1
1
10
100
100
1000
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
Junction Capacitance (pF)
MBR1035, MBR1045
MBR1050, MBR1060
0.01
0.1
1
10
100
0.1
10
100
1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)