Datasheet

MCL4151
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Jul-17
2
Document Number: 85567
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Diode Capacitance vs. Reverse Voltage
Fig. 4 - Board for R
thJA
Definition (in mm)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
0.880 1 V
Reverse current
V
R
= 50 V I
R
50 nA
V
R
= 50 V, T
j
= 150 °C I
R
50 μA
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
(BR)
75 V
Diode capacitance
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
C
D
2pF
Reverse recovery time
I
F
= I
R
= 10 mA,
i
R
= 1 mA
t
rr
4
ns
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100 Ω
2
0 40 80 120 160
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
200
94 9151
V
R
=50V
Scattering Limit
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V - Forward Voltage (V)
2.0
94 9152
F
T = 25 °C
j
T = 100 °C
j
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
100
94 9153
2.5
f=1MHz
T
j
= 25 °C
25
2.5
10
0.71 1.3
1.27
9.9
24
0.152
0.355
95 10329