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VISHAY

SFH601

Document Number 83663

Rev. 1.4, 26-Oct-04

Vishay Semiconductors

www.vishay.com

i179004i179004

Pb-free

Optocoupler, Phototransistor Output, With Base Connection

Features

• Isolation Test Voltage (1.0 s), 5300 V

RMS

•V

CEsat

0.25 (≤ 0.4) V, I

= 10 mA, I

= 2.5 mA

• Built to conform to VDE Requirements

• Highest Quality Premium Device

• Long Term Stability

• Storage Temperature, - 55 ° to + 150 °C

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,

Double Protection

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

• CSA 93751

• BSI IEC60950 IEC60065

Description

The SFH601 is an optocoupler with a Gallium Ars-

enide LED emitter which is optically coupled with a sil-

icon planar phototransistor detector. The component

is packaged in a plastic plug-in case 20 AB DIN

41866.

The coupler transmits signals between two electri-

cally isolated circuits.

Order Information

For additional information on the available options refer to

Option Information.

Part Remarks

SFH601-1 CTR 40 - 80 %, DIP-6

SFH601-2 CTR 63 - 125 %, DIP-6

SFH601-3 CTR 100 - 200 %, DIP-6

SFH601-4 CTR 160 - 320 %, DIP-6

SFH601-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6)

SFH601-1X007 CTR 40 - 80 %, SMD-6 (option 7)

SFH601-1X009 CTR 40 - 80 %, SMD-6 (option 9)

SFH601-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)

SFH601-2X007 CTR 63 - 125 %, SMD-6 (option 7)

SFH601-2X009 CTR 63 - 125 %, SMD-6 (option 9)

SFH601-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)

SFH601-3X007 CTR 100 - 200 %, SMD-6 (option 7)

SFH601-3X009 CTR 100 - 200 %, SMD-6 (option 9)

SFH601-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)

SFH601-4X007 CTR 160 - 320 %, SMD-6 (option 7)

SFH601-4X009 CTR 160 - 320 %, SMD-6 (option 9)

Summary of content (10 pages)

PAGE 1
SFH601 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • • • • • Isolation Test Voltage (1.0 s), 5300 VRMS VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA Built to conform to VDE Requirements Highest Quality Premium Device Long Term Stability Storage Temperature, - 55 ° to + 150 °C Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No.
PAGE 2
SFH601 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.
PAGE 3
SFH601 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.25 1.65 Unit Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reverse current VR = 6.
PAGE 4
SFH601 VISHAY Vishay Semiconductors Switching Non-saturated Parameter Current Rise time Fall time Turn-on time Turn-off time tf ton toff µs µs 2.0 3.0 2.3 Fall time Tutn-on time Turn-off time ton toff VCC = 5.0 V, RL = 75 Ω Test condition Symbol IF tr Unit mA µs 10 2.0 Current Rise time Switching Saturated Parameter Test condition VCEsat = 0.25 (≤ 0.4) V Symbol IF tr tf Unit mA µs µs µs µs SFH601-1 20 2.0 11 3.0 18 SFH601-2 10 3.0 14 4.
PAGE 5
SFH601 VISHAY Vishay Semiconductors DC Pulsbetrieb Pulse DC Pulsbetrieb Pulse (VCE = 5.0 V) IC/IF = f (IF) (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) isfh601_05 isfh601_08 Figure 8. Current Transfer Ratio vs. Diode Current Figure 5. Current Transfer Ratio vs. Diode Current DC Pulsbetrieb Pulse DC Pulsbetrieb Pulse (TA = 50°C, VCE = 5.0 V) IC/IF = f (IF) IC = f (VCE) (IF = 0) isfh601_06 isfh601_09 Figure 9. Transistor Characteristics Figure 6. Current Transfer Ratio vs.
PAGE 6
SFH601 VISHAY Vishay Semiconductors VF = f (IF) VCEsat = f (IC) isfh601_11 isfh601_14 Figure 11. Forward Voltage Figure 14. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-2 ICEO = f (V,T) (IF = 0) VCEsat = f (IC) isfh601_15 isfh601_12 Figure 12. Collector-Emitter Off-state Current Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-3 VCEsat VCEsat = f (IC) VCEsat = f (IC) mA isfh601_13 Figure 13. Saturation Voltage vs.
PAGE 7
SFH601 VISHAY Vishay Semiconductors D = parameter, IF = f (tp) isfh601_17 Figure 17. Permissible Pulse Load Ptot = f (TA) isfh601_18 Figure 18. Permissible Power Dissipation for Transistor and Diode Ptot = f (TA) isfh601_19 Figure 19. Permissible Forward Current Diode Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.
PAGE 8
SFH601 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18° 4° typ. .031 (0.80) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP.
PAGE 9
SFH601 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
PAGE 10
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