Datasheet

5–1
SFH610A/611A/615A/617A
5.3 kV TRIOS

OPTOCOUPLER
HIGH RELIABILITY
FEATURES
• High Current Transfer Ratios
at 10 mA: 40–320%
at 1 mA: 60% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 VACRMS
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity (Uncon-
nected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option – See SFH6106/16/56 Data Sheet
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 V
RMS
or DC.
Specifications subject to change.
Maximum Ratings
Emitter
Reverse Voltage............................................................................6 V
DC Forward Current................................................................ 60 mA
Surge Forward Current (tP ≤
10 µ s) ............................................ 2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage.............................................................70 V
Emitter-Collector Voltage...............................................................7 V
Collector Current......................................................................50 mA
Collector Current (tP ≤
1 ms)....................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74......................................................... 5300 VAC
RMS
Creepage................................................................................ ≥ 7 mm
Clearance................................................................................ ≥
7 mm
Insulation Thickness between Emitter and Detector............ ≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1......................................... ≥
175
Isolation Resistance
V
IO
=500 V, T
A
=25 ° C .......................................................... ≥ 10
12
Ω
V
IO
=500 V, T
A
=100 ° C ........................................................ ≥ 10
11
Ω
Storage Temperature Range.......................................–55 to +150 ° C
Ambient Temperature Range......................................–55 to +100 °
C
Junction Temperature...............................................................100 °
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥
1.5 mm)....................................260 ° C
Package Dimensions in Inches (mm)
.268 (6.81)
.255 (6.48)
12
43
.190 (4.83)
.179 (4.55)
Pin One I.D.
.045 (1.14)
.030 (.76)
4°
Typ.
1.00 (2.54)
Typ.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
10°
Typ.
3°–9°
.305
(7.75)
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
4
3
Emitter
Collector
Anode
Cathode
SFH610A
1
2
4
3
Collector
Emitter
Cathode
Anode
SFH611A
1
2
4
3
Collector
Emitter
Anode
Cathode
SFH615A/617A