Datasheet

Vishay Siliconix
Si4116DY
New Product
Document Number: 69837
S-83046-Rev. C, 22-Dec-08
www.vishay.com
1
N-Channel 25-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
APPLICATIONS
• Synchronous Buck
- Low Side
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
25
0.0086 at V
GS
= 10 V
18
17.5 nC
0.0095 at V
GS
= 4.5 V
17
0.0115 at V
GS
= 2.5 V
15.5
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4116DY-T1-E3 (Lead (Pb)-free)
Si4116DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
25
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
18
A
T
C
= 70 °C
14.3
T
A
= 25 °C
12.7
b, c
T
A
= 70 °C
10.1
b, c
Pulsed Drain Current
I
DM
50
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
4.5
T
A
= 25 °C
2.2
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20
Avalanche Energy
E
AS
20
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
5
W
T
C
= 70 °C
3.2
T
A
= 25 °C
2.5
b, c
T
A
= 70 °C
1.6
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
43 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
19 25