Datasheet

ManualsBrandsVISHAY ManualsFETsSI7309DN-T1-E3, MOSFET

Vishay Siliconix

Si7309DN

Document Number: 73434

S-83051-Rev. B, 29-Dec-08

www.vishay.com

P-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

Power MOSFET

• Low Thermal Resistance PowerPAK

Package

with Small Size and Low 1.07 mm Profile

APPLICATIONS

• CCFL inverter

• Class D-amp

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

- 60

0.115 at V

= - 10 V

- 8

14.5 nC

0.146 at V

= - 4.5 V

- 8

Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free)

Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

3.30 mm

PowerPAK 1212-8

Bottom View

P-Channel MOSFET

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 81 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

- 60

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 8

= 70 °C

- 7.8

= 25 °C

- 3.9

b, c

= 70 °C

- 3.1

b, c

Pulsed Drain Current (10 µs Width)

- 20

Continuous Source-Drain Diode Current

= 25 °C

- 8

= 25 °C

- 2.7

b, c

Avalanche Current

L = 0.1 mH

- 15

Single-Pulse Avalanche Energy

11 mJ

Maximum Power Dissipation

= 25 °C

19.8

= 70 °C

12.7

= 25 °C

3.2

b, c

= 70 °C

2.1

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

thJA

31 39

°C/W

Maximum Junction-to-Case (Drain)

Steady State

thJC

56.3

Summary of content (13 pages)

PAGE 1
Si7309DN Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.115 at VGS = - 10 V -8 0.146 at VGS = - 4.5 V -8 VDS (V) - 60 Qg (Typ.) 14.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 • CCFL inverter • Class D-amp S 3.30 mm S 3.
PAGE 2
Si7309DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max.
PAGE 3
Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 VGS = 10 thru 5 V 4 12 I D - Drain Current (A) I D - Drain Current (A) 16 4V 8 4 3 2 TC = 125 °C 1 25 °C 3V - 55 °C 0 0 1 2 3 4 0 0.0 5 1.0 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 3.5 4.0 1000 0.25 C - Capacitance (pF) 800 0.20 VGS = 4.5 V 0.15 VGS = 10 V 0.10 Ciss 600 400 200 0.05 Coss 0.
PAGE 4
Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 R DS(on) - Drain-to-Source On-Resistance (Ω) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 1.0 0.8 1.2 ID = 3.9 A 0.25 0.20 TA = 125 °C 0.15 TA = 25 °C 0.10 0.05 2 1.4 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 40 2.
PAGE 5
Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 25 20 Power Dissipation (W) ID - Drain Current (A) 10 8 Package Limited 6 4 15 10 5 2 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 100 10 TA = 1 10-6 L · ID BV - V DD 10-5 10-4 10-3 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation
PAGE 6
Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.
PAGE 7
Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212, (Single/Dual) W H L K E2 E4 M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 3 K1 Notes: 1. Inch will govern 2 L K E2 E4 D2 D3(2x) D4 c A H D2 4 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs b θ D5 θ E3 Backside View of Dual Pad DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.
PAGE 8
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 9
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 10
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 11
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.
PAGE 13
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