Datasheet

ManualsBrandsVISHAY ManualsFETsSI7414DN-T1-E3, MOSFET

Vishay Siliconix

Si7414DN

Document Number: 71738

S-83043-Rev. D, 22-Dec-08

www.vishay.com

N-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

•TrenchFET

Power MOSFET

• PWM Optimized

APPLICATIONS

• Primary Side Switch

• Synchronous Rectifier

• Motor Drives

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

0.025 at V

= 10 V

8.7

0.036 at V

= 4.5 V

7.3

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7414DN-T1-E3 (Lead (Pb)-free)

Si7414DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFE

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

8.7 5.6

= 70 °C 7.0 4.4

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

3.2 1.3

Single Avalanche Current

L = 0.1 mH

Single Avalanche Energy (Duty Cycle 1 %) E

18 mJ

Maximum Power Dissipation

= 25 °C

3.8 1.5

= 70 °C 2.0 0.8

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to 150

°C

Soldering Recommendations

b,c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 10 s

thJA

26 33

°C/WSteady State 65 81

Maximum Junction-to-Case Steady State R

thJC

1.9 2.4

Summary of content (11 pages)

PAGE 1
Si7414DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • PWM Optimized APPLICATIONS • Primary Side Switch • Synchronous Rectifier • Motor Drives PowerPAK 1212-8 S 3.30 mm 3.
PAGE 2
Si7414DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1 Typ. Max.
PAGE 3
Si7414DN Vishay Siliconix TA = 25 °C, unless otherwise noted 0.06 1200 0.05 1000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 800 Ciss 600 400 Coss Crss 200 0.00 0 0 5 10 15 20 25 30 0 10 ID - Drain Current (A) 20 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 VDS = 30 V ID = 8.7 A 8 VGS = 10 V ID = 8.7 A 1.
PAGE 4
Si7414DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.4 50 ID = 250 µA 40 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 TJ - Temperature (°C) 0.1 1 Time (s) 10 100 600 Single Pulse Power, Junction-to-Ambient Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2.
PAGE 5
Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212, (Single/Dual) W H L K E2 E4 M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 3 K1 Notes: 1. Inch will govern 2 L K E2 E4 D2 D3(2x) D4 c A H D2 4 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs b θ D5 θ E3 Backside View of Dual Pad DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.
PAGE 6
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 7
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 8
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 9
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.
PAGE 11
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