Datasheet

SiA471DJ
www.vishay.com
Vishay Siliconix
S19-0336-Rev. B, 08-Apr-2019
1
Document Number: 76741
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 30 V (D-S) MOSFET
Marking code: B9
FEATURES
• TrenchFET
®
Gen IV p-channel power MOSFET
• Thermally enhanced PowerPAK
®
SC-70 package
• Very low R
DS(on)
x area minimizes power loss on
limited PCB real estate
• Provides excellent R
DS
-Q
g
Figure-of-Merit (FOM)
for switching applications
• 100 % R
g
tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery charging and management
•Load switch
•DC/DC converters
• Power management in battery-operated,
mobile and wearable devices
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 5 s
c. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 80 °C/W
PRODUCT SUMMARY
V
DS
(V) -30
R
DS(on)
max. () at V
GS
= -10 V 0.0140
R
DS(on)
max. () at V
GS
= -4.5 V 0.0241
Q
g
typ. (nC) 8.9
I
D
(A) -30.3
Configuration Single
PowerPAK
®
SC-70-6L Single
3
G
2
D
1
D
S
4
D
5
D
6
Bottom View
2.05 mm
2.05 mm
1
Top View
S
7
S
G
D
P-Channel
MOSFET
ORDERING INFORMATION
Package PowerPAK SC-70
Lead (Pb)-free and halogen-free SiA471DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-30
V
Gate-source voltage V
GS
-20 / +16
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
-30.3
A
T
C
= 70 °C -24.2
T
A
=25 °C -12.9
a, b
T
A
= 70 °C -10.3
a, b
Pulsed drain current (t = 100 μs) I
DM
-70
Continuous source-drain diode current
T
C
= 25 °C
I
S
-16
T
A
= 25 °C -2.9
a, b
Maximum power dissipation
T
C
= 25 °C
P
D
19.2
W
T
C
= 70 °C 12.3
T
A
= 25 °C 3.5
a, b
T
A
= 70 °C 2.2
a, b
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c, d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a, e
t  5 s R
thJA
28 36
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
5.3 6.5