Datasheet
SiSS26LDN
www.vishay.com
Vishay Siliconix
S18-1287-Rev. A, 31-Dec-2018
3
Document Number: 76797
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20
40
60
80
100
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
V
GS
= 2 V
10
100
1000
10000
0.0030
0.0035
0.0040
0.0045
0.0050
0.0055
0.0060
0 20406080100
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0 7 14 21 28 35
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 10 A
V
DS
= 15 V, 30 V, 45 V
10
100
1000
10000
0
25
50
75
100
125
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
10
100
1000
10 000
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, 10 A
V
GS
= 10 V, 10 A