Datasheet
Vishay Siliconix
SUM45N25-58
New Product
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
www.vishay.com
1
N-Channel 250-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
APPLICATIONS
• Primary Side Switch
• Plasma Display Panel Sustainer Function
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(Ω)I
D
(A)
250
0.058 at V
GS
= 10 V
45
0.062 at V
GS
= 6 V
43
TO-263
SDG
Top View
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Guaranteed by design
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
250
V
Typical Avalanche Voltage
d
V
DS (Avalanche)
Ty p
300
Gate-Source Voltage
V
GS
± 30
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
45
A
T
C
= 125 °C
25
Pulsed Drain Current
I
DM
90
Avalanche Current
I
AR
35
Repetitive Avalanche Energy
a
L = 0.1 mH
E
AR
61 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
375
b
W
T
A
= 25 °C
c
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
°C/W
Junction-to-Case (Drain)
R
thJC
0.4
RoHS
COMPLIANT