Datasheet

ManualsBrandsVishay ManualsOpto- & Photo CouplersOptocoupler SOP-4L 70 V

TCLT10.. Series

Document Number 83515

Rev. 2.0, 27-Sep-05

Vishay Semiconductors

www.vishay.com

17295

D E

Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat

Package

Features

• SMD Low profile 4 lead package

• High Isolation 5000 V

RMS

• CTR flexibility available see order infor-

mation

• Special construction

• Extra low coupling capacitance

• Connected base

• DC input with transistor output

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code W, Double

Protection

• CSA (C-UL) 22.2 Bulletin 5A Recognized File No.

E- 76222

• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN

60950 (BS 7002), Certificate number 7081 and

7402

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

• FIMKO (SETI): EN 60950, Certificate No. 11027

•NOTE:

See the Safety Standard Approval List "Agency

Table" for more detailed information.

Applications

• Switchmode power supplies

• Computer peripheral interface

• Microprocessor system interface

Description

The TCLT10.. Series consists of a phototransistor

optically coupled to a gallium arsenide infrared-emit-

ting diode in a 4-lead SOP4L package.

The elements are mounted on one leadframe provid-

ing a fixed distance between input and output for high-

est safety requirements.

Order Information

NOTE: Available only on tape and reel.

Part Remarks

TCLT1000 CTR 50 - 600 %, SOP-4L

TCLT1002 CTR 63 - 125 %, SOP-4L

TCLT1003 CTR 100 - 200 %, SOP-4L

TCLT1004 CTR 160 - 320 %, SOP-4L

TCLT1005 CTR 50 - 150 %, SOP-4L

TCLT1006 CTR 100 - 300 %, SOP-4L

TCLT1007 CTR 80 - 160 %, SOP-4L

TCLT1008 CTR 130 - 260 %, SOP-4L

TCLT1009 CTR 200 - 400 %, SOP-4L

Summary of content (10 pages)

PAGE 1
TCLT10.. Series Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package Features • SMD Low profile 4 lead package • High Isolation 5000 VRMS • CTR flexibility available see order information • Special construction • Extra low coupling capacitance • Connected base • DC input with transistor output • Lead (Pb)-free component Agency Approvals • UL1577, File No. E76222 System Code W, Double Protection • CSA (C-UL) 22.2 Bulletin 5A Recognized File No.
PAGE 2
TCLT10.. Series Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
PAGE 3
TCLT10.. Series Vishay Semiconductors Coupler Parameter Test condition Symbol Min Typ. Max Unit 0.3 V Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.
PAGE 4
TCLT10.. Series Vishay Semiconductors Insulation Rated Parameters Parameter Test condition Symbol Min Vpd 1.6 kV VIOTM 8 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 10 11 Ω VIO = 500 V, Tamb = 150 °C RIO 109 Ω Partial discharge test voltage Routine test 100 %, ttest = 1 s Partial discharge test voltage Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Insulation resistance Typ.
PAGE 5
TCLT10.. Series Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time Parameter VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) td Min Typ. 3.0 Max µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) tr 3.0 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) ton 6.0 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) ts 0.3 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) tf 4.
PAGE 6
TCLT10.. Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) P tot –Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 V CE = 20 V IF = 0 1000 100 10 1 0 0 40 80 Tamb – Ambient Temperature( °C ) 96 11700 0 120 Figure 6. Total Power Dissipation vs. Ambient Temperature IC – Collector Current ( mA ) 10 1 0.1 0 V CE=5V 10 1 0.1 0.01 0.1 0.2 0.
PAGE 7
TCLT10.. Series 1.0 ton / toff –Turn on / Turn off Time ( µ s ) VCEsat– Collector Emitter Saturation Voltage (V) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% Saturated Operation V S=5V RL=1k Ω 40 30 toff 20 10 0 ton 0 1 100 10 I C – Collector Current ( mA ) 95 11028 0 95 11031 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 50 5 10 15 20 I F – Forward Current ( mA ) Figure 15. Turn on / off Time vs.
PAGE 8
TCLT10.. Series Vishay Semiconductors Package Dimensions in mm 15243 www.vishay.com 8 Document Number 83515 Rev. 2.
PAGE 9
TCLT10.. Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
PAGE 10
Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.