Datasheet

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4
Document Number 83515
Rev. 2.0, 27-Sep-05
TCLT10.. Series
Vishay Semiconductors
Insulation Rated Parameters
Parameter Test condition Symbol Min Typ. Max Unit
Partial discharge test voltage -
Routine test
100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
Lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
8kV
V
pd
1.3 kV
Insulation resistance V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
Figure 1. Derating diagram
0 25 50 75 125
0
50
100
150
200
300
P – Total Power Dissipation ( mW )
tot
T
si
– Safety Temperature ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2