Datasheet

TCRT1000, TCRT1010
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Jun-12
2
Document Number: 83752
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ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Notes
(1)
Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance
(2)
Measured without reflecting medium
OUTPUT (DETECTOR)
Collector emitter voltage V
CEO
32 V
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Power dissipation T
amb
≤ 25 °C P
V
100 mW
Junction temperature T
j
100 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
100
200
300
0
95 11071
P - Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
IR - diode
Coupled device
Phototransistor
25 50
75 100
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
SENSOR
Collector current
V
CE
= 5 V, I
F
= 20 mA,
d = 1 mm (figure 2)
I
C
(1)
0.3 0.5 mA
Cross talk current V
CE
= 5 V, I
F
= 20 mA, (figure 1) I
CX
(2)
1μA
Collector emitter saturation
voltage
I
F
= 20 mA, I
C
= 0.1 mA,
d = 1 mm (figure 2)
V
CEsat
(1)
0.3 V
INPUT (EMITTER)
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Radiant intensity I
F
= 50 mA, t
p
= 20 ms I
e
7.5 mW/sr
Peak wavelength I
F
= 100 mA λ
P
940 nm
Virtual source diameter Method: 63 % encircled energy d 1.2 mm
OUTPUT (DETECTOR)
Collector emitter voltage I
C
= 1 mA V
CEO
32 V
Emitter collector voltage I
E
= 100 μA V
ECO
5V
Collector dark current V
CE
= 20 V, I
F
= 0 A, E = 0 lx I
CEO
200 nA