Datasheet

TCST1230
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 21-Sep-12
2
Document Number: 83765
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
OUTPUT (DETECTOR)
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
100 mA
Power dissipation T
amb
≤ 25 °C P
V
150 mW
Junction temperature T
j
100 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
0
100
200
300
400
95 11088
P - Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
150 120 90 60
30
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
COUPLER
Collector current V
CE
= 10 V, I
F
= 20 mA I
C
0.5 14 mA
Collector emitter saturation
voltage
I
F
= 20 mA, I
C
= 0.2 mA V
CEsat
0.4 V
INPUT (EMITTER)
Forward voltage I
F
= 60 mA V
F
1.25 1.5 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT (DETECTOR)
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 10 μA V
ECO
7V
Collector dark current V
CE
= 25 V, I
F
= 0 A, E = 0 lx I
CEO
10 100 nA
SWITCHING CHARACTERISTICS
Turn-on time
I
C
= 1 mA, V
CE
= 5 V,
R
L
= 100 Ω (see figure 2)
t
on
15 μs
Turn-off time
I
C
= 1 mA, V
CE
= 5 V,
R
L
= 100 Ω (see figure 2)
t
off
10 μs