Datasheet

TEFT4300
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Aug-14
1
Document Number: 81549
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
TEFT4300 is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1 plastic package with daylight
blocking filter. Filter bandwidth is matched with 900 nm to
950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 30°
• Package matched with IR emitter series
TSUS4300 and TSAL4400
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Optical switches
• Counters and sorters
• Interrupters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8636-2
PRODUCT SUMMARY
COMPONENT I
ca
(mA) ϕ (deg) λ
0.5
(nm)
TEFT4300 3.2 ± 30 875 to 1000
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEFT4300 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 55 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t ≤ 3 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
450 K/W