Datasheet

TEFT4300
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Aug-14
2
Document Number: 81549
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
020406080
0
25
50
75
100
125
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
100
94 8308
R
thJA
= 450 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
3pF
Collector light current E
e
= 1 mW/cm
2
, λ = 950 nm, V
CE
= 5 V I
ca
0.8 3.2 mA
Angle of half sensitivity ϕ ± 30 deg
Wavelength of peak sensitivity λ
p
925 nm
Range of spectral bandwidth λ
0.5
875 to 1000 nm
Collector emitter saturation voltage E
e
= 1 mW/cm
2
, λ = 950 nm, I
C
= 0.1 mA V
CEsat
0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
on
2μs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
off
2.3 μs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω f
c
180 kHz
20
100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm