Datasheet

TEMD1000, TEMD1020, TEMD1030, TEMD1040
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 09-Aug-11
2
Document Number: 81564
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
11.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
110nA
Diode capacitance V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.8 pF
Reverse light current
E
e
= 1 mW/cm
2
,  = 870 nm,
V
R
= 5 V
I
ra
6.0 10 13.0 μA
E
e
= 1 mW/cm
2
,  = 950 nm,
V
R
= 5 V
I
ra
12 μA
Temperature coefficient of I
ra
V
R
= 5 V,  = 870 nm, TK
Ira
0.2 %/K
Absolute spectral sensitivity
V
R
= 5 V,  = 870 nm s()0.60A/W
V
R
= 5 V,  = 950 nm s()0.55A/W
Angle of half sensitivity  ± 15 deg
Wavelength of peak sensitivity 
p
940 nm
Range of spectral bandwidth 
0.5
790 to 1050 nm
Rise time V
R
= 10 V, R
L
= 50 ,  = 820 nm t
r
4ns
Fall time V
R
= 10 V, R
L
= 50 ,  = 820 nm t
f
4ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
0.1
1.0
10
100
0.01
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm²)
16055
V
CE
= 5 V
λ = 950 nm
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1