Datasheet

TEMD7000X01
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 18-Feb-15
2
Document Number: 81951
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
13nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
4pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.3 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
-2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
3μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current E
e
= 1 mW/cm
2
, λ = 950 nm, V
R
= 5 V I
ra
2.4 3 3.6 μA
Angle of half sensitivity ϕ ± 60 deg
Wavelength of peak sensitivity λ
p
900 nm
Range of spectral bandwidth λ
0.1
350 to 1120 nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
100 ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
0.001
0.01
0.1
1
10
0.01 0.1 1 10
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
21535
V
R
= 5 V
λ = 950 nm
1
10
100
0.1 1 10 100
V
R
- Reverse Voltage
1 mW/cm
2
I
ra
- Reverse Light Current (µA)
17026
λ = 950 nm