Datasheet

TEMT1000, TEMT1020, TEMT1030, TEMT1040
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 29-Jun-11
2
Document Number: 81554
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21167
R
thJA
= 400 K/W
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
3pF
Angle of half sensitivity  ± 15 deg
Wavelength of peak sensitivity 
p
880 nm
Range of spectral bandwidth 
0.5
730 to 1000 nm
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
,  = 950 nm,
I
C
= 0.1 mA
V
CEsat
0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100  t
on
2.0 μs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100  t
off
2.3 μs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100  f
c
180 kHz
Collector light current
E
e
= 1 mW/cm
2
,  = 950 nm,
V
CE
= 5 V
I
ca
27.0 mA
20
100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm