Datasheet

TEMT6000X01
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-Aug-11
2
Document Number: 81579
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R
thJA
450 K/W
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
020406080
0
25
50
75
100
125
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
100
94 8308
R
thJA
= 450 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
6V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
350nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
16 pF
Collector light current
E
V
= 20 lx, CIE illuminant A,
V
CE
= 5 V
I
PCE
3.5 10 16 μA
E
V
= 100 lx, CIE illuminant A,
V
CE
= 5 V
I
PCE
50 μA
Temperature coefficient of I
PCE
CIE illuminant A TK
IPCE
1.18 %/K
LED, white TK
IPCE
0.9 %/K
Angle of half sensitivity  ± 60 deg
Wavelength of peak sensitivity 
p
570 nm
Range of spectral bandwidth 
0.5
440 to 800 nm
Collector emitter saturation voltage
E
V
= 20 lx, CIE illuminant A,
I
PCE
= 1.2 μA
V
CEsat
0.1 V