Datasheet

TEMT7000X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
2
Document Number: 81961
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance
0
20
40
60
80
100
120
0 102030405060708090100
21331
R
thJA
= 270 K/W
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
20 V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
1 100 nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
25 pF
Collector light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
I
CA
225 450 675 μA
Angle of half sensitivity ϕ ± 60 deg
Wavelength of peak sensitivity λ
p
850 nm
Range of spectral bandwidth λ
0.1
470 to 1090 nm
Collector emitter saturation voltage I
C
= 0.05 mA V
CEsat
0.4 V
Temperature coefficient of I
ca
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
Tk
Ica
1.1 %/K
1
10
100
1000
10 000
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
I
CE0
- Collector Dark Current (nA)
I
F
= 0
V
CE
= 70 V
V
CE
= 25 V
V
CE
= 5 V
20594
0.001
0.01
0.1
1
10
0.01 0.1 1 10
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
21551
V
CE
= 5 V