Datasheet

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TLCR5800, TLCY5800

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 03-Mar-15

Document Number: 83178

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Ultrabright LED, Ø 5 mm Untinted Non-Diffused Package

DESCRIPTION

The TLC.58.. series is a clear, non-diffused 5 mm LED for

high end applications where supreme luminous intensity

required.

These lamps with clear untinted plastic case utilize the

highly developed ultrabright AlInGaP (AS).

The lens and the viewing angle is optimized to achieve best

performance of light output and visibility.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

•Package: 5 mm

• Product series: power

• Angle of half intensity: ± 4°

FEATURES

• Untinted non-diffused lens

• Utilizing ultrabright AllnGaP (AS)

• High luminous intensity

• High operating temperature: T

(chip junction

temperature) up to 125 °C for AllnGaP devices

• Luminous intensity and color categorized for

each packing unit

• ESD-withstand voltage: up to 2 kV according to

JESD22-A114-B

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Interior and exterior lighting

• Outdoor LED panels

• Instrumentation and front panel indicators

• Central high mounted stop lights (CHMSL) for motor

vehicles

• Replaces incandescent lamps

• Traffic signals

• Light guide design

Note

(1)

Driving the LED in reverse direction is suitable for a short term application

19223

PARTS TABLE

PART COLOR

LUMINOUS INTENSITY

(mcd)

at I

(mA)

WAVELENGTH

(nm)

at I

(mA)

FORWARD VOLTAGE

(V)

at I

(mA)

TECHNOLOGY

MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

TLCR5800 Red 7500 35 000 - 50 611 616 622 50 - 2.1 2.7 50 AllnGaP on GaAs

TLCR5800-AS21 Red 7500 35 000 - 50 611 616 622 50 - 2.1 2.7 50 AllnGaP on GaAs

TLCY5800 Yellow 5750 25 000 - 50 585 590 597 50 - 2.1 2.7 50 AllnGaP on GaAs

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

TLCR5800, TLCY5800

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage

(1)

DC forward current T

amb

≤ 85 °C I

50 mA

Surge forward current t

≤ 10 μs I

FSM

Power dissipation P

135 mW

Junction temperature T

125 °C

Operating temperature range T

amb

-40 to +100 °C

Storage temperature range T

stg

-40 to +100 °C

Soldering temperature t ≤ 5 s, 2 mm from body T

260 °C

Thermal resistance junction/ambient R

thJA

300 K/W

Summary of content (7 pages)

PAGE 1
TLCR5800, TLCY5800 www.vishay.com Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Utilizing ultrabright AllnGaP (AS) • High luminous intensity • High operating temperature: Tj (chip junction temperature) up to 125 °C for AllnGaP devices • Luminous intensity and color categorized for each packing unit 19223 DESCRIPTION • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B The TLC.58..
PAGE 2
TLCR5800, TLCY5800 www.vishay.com Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TLCR5800, RED TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Luminous intensity (1) PARAMETER IF = 50 mA TLCR5800 IV 7500 35 000 - mcd Dominant wavelength IF = 50 mA λd 611 616 622 nm Peak wavelength IF = 50 mA λp - 622 - nm Spectral bandwidth at 50 % Irel max.
PAGE 3
TLCR5800, TLCY5800 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 60 Irel. - Relative Luminous Intensity 1.2 IF - Forward Current (mA) 50 yellow red 40 30 20 10 0 0 20 40 60 80 100 0.2 590 610 630 650 670 λ- Wavelength (nm) 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° IV rel - Relative Radiant Intensity 0.4 Fig. 4 - Relative Intensity vs. Wavelength 80° IV rel - Relative Luminous Intensity 10° 0.
PAGE 4
TLCR5800, TLCY5800 www.vishay.com Vishay Semiconductors 1.2 red IV rel. - Relative Luminous Intensity IV rel - Relative Luminous Intensity 2.5 2.0 1.5 1.0 0.5 - 25 0 25 50 75 560 580 600 620 640 λ - Wavelength (nm) Fig. 10 - Relative Intensity vs. Wavelength 10 IV rel - Relative Luminous Intensity ΔVF - Change of Forward Voltage (mV) 0.2 540 250 200 red 50 mA 150 100 30 mA 0 10 mA - 50 - 100 - 150 - 200 - 50 yellow 1 0.1 0.
PAGE 5
TLCR5800, TLCY5800 www.vishay.com Δλd - Change of Dom. Wavelength (nm) Vishay Semiconductors IV rel - Relative Luminous Intensity 2.5 yellow 2.0 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) 17016 yellow 4 2 0 -2 -4 -6 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) 17017 Fig. 13 - Relative Luminous Intensity vs. Ambient Temperature Δ VF - Change of Forward Voltage (mV) 6 Fig. 15 - Change of Dominant Wavelength vs.
PAGE 6
TLCR5800, TLCY5800 www.vishay.com Vishay Semiconductors TAPE DIMENSIONS in millimeters ±2 ±1 9 ± 0.5 12 ± 0.3 18 +1 - 0.5 0.3 ± 0.2 12.7 ± 1 0.9 max. Ø 4 ± 0.2 2.54 + 0.6 - 0.1 5.08 ± 0.7 6.35 ± 0.7 12.7 ± 0.2 Measure limit over 20 index-holes: ± 1 Reel (Mat.-no. 1764) Quantity per: 1000 94 8172 Option Dim. “H” ± 0.5 mm AS 17.3 Explanation 12 - cathode leaves first 21 - anode leaves first REEL TAPE 355 52 max.
PAGE 7
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