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Vishay Semiconductors

TLVD4200

Document Number 83058

Rev. 1.7, 20-Apr-11

www.vishay.com

For technical support, please contact: LED@vishay.com

This document is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package

DESCRIPTION

The TLVD4200 serie was developed for backlighting in

the extrem bright double heterojunction (DH) red

GaAlAs on GaAs technology. Due to its special shape

the spatial distribution of the radiation is qualified for

backlighting.

To optimize the brightness of backlighting a

custom-built reflector (with scattering) is required.

Uniform illumination can be enhanced by covering the

front of the reflector with diffusor material.

This is a bright and flexible solution for backlighting

different areas.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

• Package: 3 mm backlighting

• Product series: standard

• Angle of half intensity: ± 85°

FEATURES

• High brightness

• Wide viewing angle

• Categorized for luminous flux

• Available in DH red

• Tinted clear package

• Low power dissipation

• Low self heating

• Rugged design

• High reliability

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Backlighting of display panels, LCD displays,

symbols on switches, keyboards, graphic boards

and measuring scales

• Illumination of large areas e.g. dot matrix displays

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

19231

PARTS TABLE

PART COLOR, LUMINOUS FLUX TECHNOLOGY

TLVD4200

Red, 

> 40 mlm

GaAIAs on GaAs

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage

DC forward current

50 mA

Surge forward current

 10 µs I

FSM

Power dissipation

amb

 60 °C P

100 mW

Junction temperature

100 °C

Operating temperature range

amb

- 40 to + 100 °C

Storage temperature range

stg

- 55 to + 100 °C

Soldering temperature

t  5 s, 2 mm from body T

260 °C

Thermal resistance junction/

ambient

thJA

400 K/W

Summary of content (5 pages)

PAGE 1
TLVD4200 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction (DH) red GaAlAs on GaAs technology. Due to its special shape the spatial distribution of the radiation is qualified for backlighting. To optimize the brightness of backlighting a custom-built reflector (with scattering) is required.
PAGE 2
TLVD4200 Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. Luminous flux IF = 15 mA V 40 80 mlm Dominant wavelength IF = 10 mA d 640 nm Peak wavelength IF = 10 mA p 650 nm Angle of half intensity IF = 10 mA  ± 85 deg Forward voltage IF = 20 mA VF 1.8 IR = 10 A VR VR = 0, f = 1 MHz Cj Reverse voltage Junction capacitance 6 MAX. UNIT 2.
PAGE 3
TLVD4200 Vishay Semiconductors 100 10 Φ V rel - Relative Luminous Flux IF - Forward Current (mA) red 10 1 1 1.5 2 VF - Forward Voltage (V) 95 10014 0.1 1 10 Figure 6. Relative Luminous Flux vs. Forward Current 1.2 2.0 Irel - Relative Luminous Intensity red 1.6 1.2 0.8 0.4 red 1.0 0.8 0.6 0.4 0.2 0 600 0 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 96 11605 620 95 10018 Figure 4. Rel. Luminous Flux vs. Ambient Temperature 640 660 700 680 - Wavelength (nm) Figure 7.
PAGE 4
TLVD4200 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 9510953 www.vishay.com 4 For technical support, please contact: LED@vishay.com Document Number 83058 Rev. 1.7, 20-Apr-11 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 5
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