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TSAL4400

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 03-Nov-16

Document Number: 81006

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION

TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs,

MQW technology with high radiant power molded in a

blue-gray plastic package.

FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): Ø 3

• Peak wavelength: λ

= 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 25°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector TEFT4300

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared remote control units

• Free air transmission systems

• Infrared source for optical counters and card readers

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

94 8636

PRODUCT SUMMARY

COMPONENT I

(mW/sr) ϕ (deg) λ

(nm) t

(ns)

TSAL4400 36 ± 25 940 15

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSAL4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1

TSAL4400-RSZ Ammopack MOQ: 8000 pcs, 2000 pcs/box T-1

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

100 mA

Peak forward current t

/T = 0.5, t

= 100 μs I

200 mA

Surge forward current t

= 100 μs I

FSM

1.5 A

Power dissipation P

160 mW

Junction temperature T

100 °C

Operating temperature range T

amb

-40 to +85 °C

Storage temperature range T

stg

-40 to +100 °C

Soldering temperature t ≤ 5 s, 2 mm from case T

260 °C

Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB R

thJA

300 K/W

Summary of content (5 pages)

PAGE 1
TSAL4400 www.vishay.
PAGE 2
TSAL4400 www.vishay.com Vishay Semiconductors 120 160 140 120 100 80 100 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 RthJA = 300 K/W 60 40 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21317 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21318 Fig. 2 - Forward Current Limit vs.
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TSAL4400 www.vishay.com Vishay Semiconductors 1000 Φe rel - Relative Radiant Power (%) 100 100 10 1 0.1 1 10 100 90 IF = 30 mA 80 70 60 50 40 30 20 10 0 840 1000 880 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current 920 960 1040 Fig. 8 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° I e rel - Relative Radiant Intensity Φ e - Radiant Power (mW) 1000 λ - Wavelength (nm) 21445 100 10 1 0.
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TSAL4400 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C Ø 3.2 ± 0.15 A AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 < 0.6 (2.5) 3.4 ± 0.15 4.4 ± 0.3 R1.4 (sphere) Ø 2.9 ± 0.15 2.54 nom. 1.5 ± 0.5 + 0.15 + 0.2 0.5 - 0.1 0.4 - 0.05 technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 9; 28.07.14 Rev. 1.9, 03-Nov-16 Document Number: 81006 4 For technical questions, contact: emittertechsupport@vishay.
PAGE 5
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