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TSAL6100

www.vishay.com

Vishay Semiconductors

Rev. 1.7, 24-Aug-11

Document Number: 81009

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

DESCRIPTION

TSAL6100 is an infrared, 940 nm emitting diode in

GaAlAs/GaAs technology with high radiant power molded in

a blue-gray plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: 

= 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Infrared remote control units with high power reqirements

• Free air transmission systems

• Infrared source for optical counters and card readers

• IR source for smoke detectors

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT I

(mW/sr)  (deg) 

(nm) t

(ns)

TSAL6100 130 ± 10 940 800

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSAL6100 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

100 mA

Peak forward current t

/T = 0.5, t

= 100 μs I

200 mA

Surge forward current t

= 100 μs I

FSM

1.5 A

Power dissipation P

160 mW

Junction temperature T

100 °C

Operating temperature range T

amb

- 40 to + 85 °C

Storage temperature range T

stg

- 40 to + 100 °C

Soldering temperature t  5 s, 2 mm from case T

260 °C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm soldered

on PCB

thJA

230 K/W

Summary of content (5 pages)

PAGE 1
TSAL6100 www.vishay.
PAGE 2
TSAL6100 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs.
PAGE 3
TSAL6100 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Φ e - Radiant Power (mW) I F - Forward Current (A) 10 1 IFSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 1.6 103 1.2 Ie rel; Φe rel 104 102 tP = 100 µs tP/T = 0.001 10 4 IF = 20 mA 0.8 0.
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TSAL6100 www.vishay.com 0° Vishay Semiconductors 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie rel - Relative Radiant Intensity 30° 80° 0.6 0.4 0.2 0 15989 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R2.49 (sphere) (4.4) 35.2 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane Ø 5 ± 0.15 1 min. + 0.2 0.6 - 0.1 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.
PAGE 5
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