Datasheet

TSFF5410
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
2
Document Number: 81091
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t  5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R
thJA
230 K/W
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
45 70 135 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
700 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms 
e
50 mW
Temperature coefficient of 
e
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity  ± 22 deg
Peak wavelength I
F
= 100 mA 
p
870 nm
Spectral bandwidth I
F
= 100 mA  40 nm
Temperature coefficient of 
p
I
F
= 100 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
15 ns
Fall time I
F
= 100 mA t
f
15 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
24 MHz
Virtual source diameter d 2.1 mm