Datasheet

ManualsBrandsVISHAY ManualsIR ComponentsIR emitter 875 nm 12 ° 5 mm Radial lead TSHA 6203

TSHA6200, TSHA6201, TSHA6202, TSHA6203

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 24-Aug-11

Document Number: 81021

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION

The TSHA620. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: λ

= 875 nm

• High reliability

• Angle of half intensity: ϕ = ± 12°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Infrared remote control and free air data transmission

systems

• This emitter series is dedicated to systems with panes in

transmission space between emitter and detector,

because of the low absorbtion of 875 nm radiation in glass

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT I

(mW/sr) ϕ (deg) λ

(nm) t

(ns)

TSHA6200 40 ± 12 875 600

TSHA6201 50 ± 12 875 600

TSHA6202 60 ± 12 875 600

TSHA6203 65 ± 12 875 600

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSHA6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

TSHA6201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

TSHA6202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

TSHA6203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

Summary of content (6 pages)

PAGE 1
TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.
PAGE 2
TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage IF 100 mA Peak forward current Forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 2.
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TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 1 A, tp = 100 μs Forward voltage IF = 100 mA, tp = 20 ms Radiant intensity IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms Radiant power PART SYMBOL TYP. MAX. UNIT TSHA6200 VF MIN. 2.8 3.5 V TSHA6201 VF 2.8 3.5 V TSHA6202 VF 2.8 3.5 V TSHA6203 VF 2.8 3.
PAGE 4
TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors 0° 10° 20° 100 10 1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity Φe - Radiant Power (mW) 1000 80° 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 8007 0.6 10 4 0.4 0.2 0 94 8008 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel; Φe rel 1.2 I F = 20 mA 0.8 0.
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TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R2.49 (sphere) (5.1) < 0.7 8.7 ± 0.3 7.7 ± 0.15 A 35.9 ± 0.55 Area not plane Ø 5 ± 0.15 1 min. + 0.2 0.6 - 0.1 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.04-4 Issue: 8; 19.05.09 96 12125 Rev. 1.
PAGE 6
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