Datasheet

TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 24-Aug-11
2
Document Number: 81021
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
2.5 A
Power dissipation P
V
180 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R
thJA
230 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
- 1.6 mV/K
Reverse current V
R
= 5 V I
R
100 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
20 pF
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
- 0.7 %/K
Angle of half intensity ϕ ± 12 deg
Peak wavelength I
F
= 100 mA λ
p
875 nm
Spectral bandwidth I
F
= 100 mA Δλ 80 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time
I
F
= 100 mA t
r
600 ns
I
F
= 1 A t
r
300 ns
Fall time
I
F
= 100 mA t
f
600 ns
I
F
= 1 A t
f
300 ns
Virtual source diameter d 3.7 mm