Datasheet
TSOP312.., TSOP314..
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 03-Apr-18
2
Document Number: 82492
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLOCK DIAGRAM APPLICATION CIRCUIT
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
30 kΩ
2
3
1
V
S
OUT
Demo-
GND
pass
AGCInput
PIN
Band
dulator
Control circuit
16832
C
1
IR receiver
GND
Circuit
μC
R
1
+ V
S
GND
Transmitter
with
TSALxxxx
V
S
V
O
17170-11
OUT
R
1
and C
1
recommended to reduce supply ripple for V
S
< 2.8 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Supply voltage (pin 2) V
S
-0.3 to +6.0 V
Supply current (pin 2) I
S
3mA
Output voltage (pin 3) V
O
-0.3 to (V
S
+ 0.3) V
Output current (pin 3) I
O
5mA
Junction temperature T
j
100 °C
Storage temperature range T
stg
-25 to +85 °C
Operating temperature range T
amb
-25 to +85 °C
Power consumption T
amb
≤ 85 °C P
tot
10 mW
Soldering temperature t ≤ 10 s, 1 mm from case T
sd
260 °C
ELECTRICAL AND OPTICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Supply current (pin 2)
E
v
= 0, V
S
= 3.3 V I
SD
0.27 0.35 0.45 mA
E
v
= 40 klx, sunlight I
SH
-0.45-mA
Supply voltage V
S
2.5 - 5.5 V
Transmission distance
E
v
= 0, test signal see Fig. 1,
IR diode TSAL6200, I
F
= 200 mA
d-45-m
Output voltage low (pin 3) I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
, test signal see Fig. 1 V
OSL
- - 100 mV
Minimum irradiance
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
, test signal see Fig. 1
E
e min.
- 0.12 0.25 mW/m
2
Maximum irradiance t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
, test signal see Fig. 1 E
e max.
30 - - W/m
2
Directivity Angle of half transmission distance ϕ
1/2
-± 45-deg
16110
E
e
T
t
pi
*
t
* t
pi
10/f
0
is recommended for optimal function
V
O
V
OH
V
OL
t
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, t = 10 ms)
Output Signal
t
d
1)
t
po
2)
1)
7/f
0
< t
d
< 15/f
0
2)
t
pi
- 5/f
0
< t
po
< t
pi
+ 6/f
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1 10 10
2
10
3
10
4
10
5
E
e
- Irradiance (mW/m
2
)
t
po
- Output Pulse Width (ms)
20752
Input burst length
λ
= 950 nm,
optical test signal, Fig. 1
Output pulse width