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TSUS4300

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 20-Oct-15

Document Number: 81053

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Infrared Emitting Diode, 950 nm, GaAs

DESCRIPTION

TSUS4300 is an infrared, 950 nm emitting diode in GaAs

technology molded in a blue tinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): Ø 3

• Peak wavelength: λ

= 950 nm

• High reliability

• Angle of half intensity: ϕ = ± 16°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector TEFT4300

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared remote control and free air transmission systems

with low forward voltage and small package requirements

• Emitter in transmissive sensors

• Emitter in reflective sensors

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8636-1

PRODUCT SUMMARY

COMPONENT I

(mW/sr) ϕ (deg) λ

(nm) t

(ns)

TSUS4300 18 ± 16 950 800

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSUS4300 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1

TSUS4300-ASZ Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

100 mA

Peak forward current t

/T = 0.5, t

= 100 μs I

200 mA

Surge forward current t

= 100 μs I

FSM

Power dissipation P

170 mW

Junction temperature T

100 °C

Operating temperature range T

amb

-40 to +85 °C

Storage temperature range T

stg

-40 to +100 °C

Soldering temperature t ≤ 5 s, 2 mm from case T

260 °C

Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R

thJA

300 K/W

Summary of content (5 pages)

PAGE 1
TSUS4300 www.vishay.
PAGE 2
TSUS4300 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 300 K/W 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21315 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21316 Fig. 2 - Forward Current Limit vs.
PAGE 3
TSUS4300 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 I e - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 100 10 1 0.5 10 -1 10 -2 94 7947 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 10 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration Φe - Radiant Power (mW) I F - Forward Current (mA) 1000 10 3 10 2 10 1 10 0 100 10 1 0.
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TSUS4300 www.vishay.com Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1000 950 λ - Wavelength (nm) 94 7994 10° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7981 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 3.2 ± 0.1 C Ø 3 ± 0.1 < 0.6 (2.8) 3.5 ± 0.
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