Datasheet

TSUS4300
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 20-Oct-15
2
Document Number: 81053
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21315
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 300 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21316
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
-1.31.7V
I
F
= 1.5 A, t
p
= 100 μs V
F
-2.2- V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
--1.3-mV/K
Reverse current V
R
= 5 V I
R
- - 100 μA
Breakdown voltage I
R
= 100 μA V
(BR)
540-
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
-30-pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
71835mW/sr
I
F
= 1.5 A, t
p
= 100 μs I
e
- 160 - mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
-20-mW
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
- -0.8 - %/K
Angle of half intensity ϕ -± 16- deg
Peak wavelength I
F
= 100 mA λ
p
- 950 - nm
Spectral bandwidth I
F
= 100 mA Δλ -50-nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
-0.2-nm/K
Rise time
I
F
= 100 mA t
r
- 800 - ns
I
F
= 1.5 A t
r
- 400 - ns
Fall time
I
F
= 100 mA t
f
- 800 - ns
I
F
= 1.5 A t
f
- 400 - ns
Virtual source diameter d - 2.1 - mm