Datasheet

ManualsBrandsVishay ManualsIR LEDsIR-LED 950nm 5mm T-1 3/4

VISHAY

TSUS540.

Document Number 81056

Rev. 1.4, 08-Apr-04

Vishay Semiconductors

www.vishay.com

94 8389

GaAs Infrared Emitting Diodes in ∅ 5 mm (T-1¾) Package

Description

TSUS540. series are infrared emitting diodes in stan-

dard GaAs on GaAs technology, molded in a clear,

blue-grey tinted plastic package. The devices are

spectrally matched to silicon photodiodes and pho-

totransistors.

Features

• Low cost emitter

• Low forward voltage

• High radiant power and radiant intensity

• Suitable for DC and high pulse current operation

• Standard T-1¾ (∅ 5 mm) package

• Comfortable angle of half intensity ϕ = ± 22°

• Peak wavelength λ

= 950 nm

• High reliability

• Good spectral matching to Si photodetectors

• Lead-free device

Applications

Infrared remote control and free air transmission sys-

tems with low forward voltage and comfortable radia-

tion angle requirements in combination with PIN

photodiodes or phototransistors.

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Reverse Voltage V

Forward current I

150 mA

Peak Forward Current t

/T = 0.5, t

= 100 µsI

300 mA

Surge Forward Current t

= 100 µsI

FSM

2.5 A

Power Dissipation P

210 mW

Junction Temperature T

100 °C

Operating Temperature Range T

amb

- 55 to + 100 °C

Storage Temperature Range T

stg

- 55 to + 100 °C

Soldering Temperature t ≤ 5 sec, 2 mm from case T

260 °C

Thermal Resistance Junction/Ambient R

thJA

375 K/W

Summary of content (6 pages)

PAGE 1
TSUS540. VISHAY Vishay Semiconductors GaAs Infrared Emitting Diodes in ∅ 5 mm (T-1¾) Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.
PAGE 2
TSUS540. VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage Typ. Max Unit IF = 100 mA, tp = 20 ms Symbol VF 1.3 1.7 V IF = 1.5 A, tp = 100 µs VF 2.2 3.4 V TKVF - 1.3 Temp.
PAGE 3
TSUS540. VISHAY Vishay Semiconductors I e – Radiant Intensity ( mW/sr ) I F – Forward Current (A) 101 I FSM = 2.5 A ( Single Pulse ) tp/T=0.01 100 0.05 0.1 0.5 1.0 10–1 10–2 94 7989 100 100 101 102 103 I F – Forward Current ( mA ) 94 7997 104 Fig. 6 Radiant Intensity vs. Forward Current Φ – Radiant Power ( mW) e 1000 10 3 10 2 10 1 10 0 10 -1 TSUS 5402 100 TSUS5400 10 1 0.
PAGE 4
TSUS540. VISHAY Vishay Semiconductors Φˇ e rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA 0 900 1000 950 λ - Wavelength ( nm ) 94 7994 Fig. 9 Relative Radiant Power vs. Wavelength I e rel – Relative Radiant Intensity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7999 Fig. 10 Relative Radiant Intensity vs. Angular Displacement www.vishay.com 4 Document Number 81056 Rev. 1.
PAGE 5
TSUS540. VISHAY Vishay Semiconductors Package Dimensions in mm 96 12119 Document Number 81056 Rev. 1.4, 08-Apr-04 www.vishay.
PAGE 6
TSUS540. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.