Datasheet

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Revision: 20-Feb-15
1
Document Number: 88549
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Dual Common Cathode Ultrafast Rectifier
FEATURES
Power pack
Glass passivated pallet chip junction
Ultrafast recovery times
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
100 V to 200 V
I
FSM
55 A
t
rr
25 ns
V
F
0.895 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
BYQ28E, UG10 BYQ28EF, UGF10
BYQ28EB, UGB10
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
PIN 1
PIN 2
K
HEATSINK
1
2
3
PIN 2
PIN 1
PIN 3
ITO-220AB
TO-263AB
1
2
3
1
2
K
Available
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
UG10BCT UG10CCT UG10DCT
UNIT
BYQ28E-100 BYQ28E-150 BYQ28E-200
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Working peak reverse voltage V
RWM
100 150 200 V
Maximum DC blocking voltage V
DC
100 150 200 V
Maximum average forward rectified current at T
C
= 100 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
55 A
Non-repetitive peak reverse current per diode at t
p
= 100 μs I
RSM
0.2 A
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
V
C
8kV
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V

Summary of content (5 pages)