Datasheet

New Product
UH20FCT& UHB20FCT
Vishay General Semiconductor
Document Number: 88964
Revision: 13-May-08
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1
Dual Common-Cathode Ultrafast Recovery Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency power factor correctors,
switching mode power supplies, freewheeling diodes
and secondary dc-to-dc rectification application.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A x 2
V
RRM
300 V
I
FSM
180 A
t
rr
25 ns
V
F
0.83 V
T
J
max. 175 °C
TO-220AB
1
2
3
TO-263AB
1
2
K
CASE
PIN 2
PIN 1
PIN 3
UH20FCT
K
HEATSINK
PIN 1
PIN 2
UHB20FCT
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH20FCT UHB20FCT UNIT
Maximum repetitive peak reverse voltage V
RRM
300 V
Maximum average forward rectified
current (see Fig.1)
per device
per diode
I
F(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode I
FSM
180 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage
per diode
(1)
I
F
= 5.0 A
I
F
= 5.0 A
T
J
= 25 °C
T
J
= 125 °C
V
F
0.96
0.77
-
-
V
I
F
= 10 A
I
F
= 10 A
T
J
= 25 °C
T
J
= 125 °C
1.0
0.83
1.2
0.90