Datasheet

ManualsBrandsVishay ManualsIR PhotodiodesIR-photodiode 950nm, SMD

VBP104FAS, VBP104FASR

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 24-Jun-14

Document Number: 81169

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon PIN Photodiode

DESCRIPTION

VBP104FAS and VBP104FASR are high speed and high

sensitive PIN photodiodes. It is a surface mount device

(SMD) including the chip with a 4.4 mm

sensitive area and

a daylight blocking filter matched with IR emitters operating

at wavelength 870 nm or 950 nm.

FEATURES

• Package type: surface mount

• Package form: GW, RGW

• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2

• Radiant sensitive area (in mm

): 4.4

• High radiant sensitivity

• Daylight blocking filter matched with 870 nm to

950 nm emitters

• Fast response times

• Angle of half sensitivity: ϕ = ± 65°

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• High speed detector for infrared radiation

• Infrared remote control and free air data transmission

systems, e.g. in combination with TSFFxxxx series IR

emitters

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

VBP104FAS

VBP104FASR

PRODUCT SUMMARY

COMPONENT I

(μA) ϕ (deg) λ

0.5

(nm)

VBP104FAS 35 ± 65 780 to 1050

VBP104FASR 35 ± 65 780 to 1050

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VBP104FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing

VBP104FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

60 V

Power dissipation T

amb

≤ 25 °C P

215 mW

Junction temperature T

100 °C

Operating temperature range T

amb

-40 to +100 °C

Storage temperature range T

stg

-40 to +100 °C

Soldering temperature Acc. reflow sloder profile fig. 8 T

260 °C

Thermal resistance junction/ambient R

thJA

350 K/W

Summary of content (8 pages)

PAGE 1
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: GW, RGW VBP104FAS • Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Floor life: 168 h, MSL 3, acc.
PAGE 2
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF TYP. MAX. UNIT 1 1.3 V IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 48 VR = 3 V, f = 1 MHz, E = 0 CD 17 Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo -2.
PAGE 3
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 1 100 10 VR - Reverse Voltage (V) 94 8423 S(λ)φ, rel - Relative Spectral Sensitivity Fig. 5 - Diode Capacitance vs. Reverse Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 700 21743 800 900 1000 λ - Wavelength (nm) 1100 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.
PAGE 4
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors 0.1 - 0.1 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 (0.47 ref.) PACKAGE DIMENSIONS FOR VBP104FAS in millimeters Flat area 0.3 min. 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size 2.4 x 2.4 Cathode 0.8 ± 0.1 1.6 ± 0.1 3.9 ± 0.1 1.95 Anode 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN specifications Recommended solder pad 8.9 1.8 5.4 Drawing-No.: 6.541-5088.01-4 Issue: 1; 15.04.10 22107 Rev. 1.
PAGE 5
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors 0.1 min. (0.47 ref.) Flat area 0.3 min. 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 PACKAGE DIMENSIONS FOR VBP104FASR in millimeters 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size Cathode 0.8 ± 0.1 Anode 3.9 ± 0.1 1.6 ± 0.1 1.95 2.4 x 2.4 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN Recommended solder pad specifications 8.9 1.8 5.4 Drawing-No.: 6.541-5087.01-4 Issue: 1; 15.04.10 22106 Rev. 1.
PAGE 6
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors TAPING DIMENSIONS FOR VBP104FAS in millimeters 21730 TAPING DIMENSIONS FOR VBP104FASR in millimeters 21731 Rev. 1.3, 24-Jun-14 Document Number: 81169 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 7
VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors REEL DIMENSIONS FOR VBP104FAS AND VBP104FASR in millimeters 21732 SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE 200 max.
PAGE 8
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