Datasheet

ManualsBrandsVishay ManualsIR PhotodiodesIR-photodiode 950nm, SMD

VBPW34FAS, VBPW34FASR

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 24-Aug-11

Document Number: 81127

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon PIN Photodiode

DESCRIPTION

VBPW34FAS and VBPW34FASR are high speed and high

sensitive PIN photodiodes. It is a surface mount device

(SMD) including the chip with a 7.5 mm

sensitive area and

a daylight blocking filter matched with IR emitters operating

at wavelength 870 nm or 950 nm.

FEATURES

• Package type: surface mount

• Package form: GW, RGW

• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2

• Radiant sensitive area (in mm

): 7.5

• High radiant sensitivity

• Daylight blocking filter matched with 870 nm to

950 nm emitters

• Fast response times

• Angle of half sensitivity: ϕ = ± 65°

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• High speed detector for infrared radiation

• Infrared remote control and free air data

transmissionsystems, e.g. in combination with TSFFxxxx

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

21726

VBPW34FAS

VBPW34FASR

PRODUCT SUMMARY

COMPONENT I

(μA) ϕ (deg) λ0.5 (nm)

VBPW34FAS 55 ± 65 780 to 1050

VBPW34FASR 55 ± 65 780 to 1050

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VBPW34FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing

VBPW34FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

60 V

Power dissipation T

amb

≤ 25 °C P

215 mW

Junction temperature T

100 °C

Operating temperature range T

amb

- 40 to + 100 °C

Storage temperature range T

stg

- 40 to + 100 °C

Soldering temperature Acc. reflow sloder profile fig. 8 T

260 °C

Thermal resistance junction/ambient R

thJA

350 K/W

Summary of content (8 pages)

PAGE 1
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • VBPW34FAS Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Floor life: 168 h, MSL 3, acc.
PAGE 2
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYP. MAX. UNIT 1 1.3 V Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN.
PAGE 3
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors S(λ)φ, rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 10 Ee - Irradiance (mW/cm2) 12787 1.0 700 21743 Fig. 3 - Reverse Light Current vs. Irradiance 800 900 1000 λ - Wavelength (nm) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA) 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.
PAGE 4
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors 0.1 -0.1 0.15 ± 0.02 1.2 ± 0.1 (0.47 ref.) 0.75 ± 0.05 PACKAGE DIMENSIONS FOR VBPW34FAS in millimeters Flat area 0.3 min. 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size 0.8 ± 0.1 1.6 ± 0.1 Cathode Anode 3.9 ± 0.1 1.95 3x3 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN specifications Recommended solder pad 8.9 1.8 5.4 Drawing-No.: 6.541-5086.01-4 Issue: 1; 15.04.10 22105 Rev. 1.
PAGE 5
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors (0.47 ref.) 0.1 min. Flat area 0.3 min 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 PACKAGE DIMENSIONS FOR VBPW34FASR in millimeters 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size 3.9 ± 0.1 Cathode Anode 0.8 ± 0.1 1.6 ± 0.1 1.95 3x3 1 ± 0.3 6.4 ± 0.3 Recommended solder pad technical drawings according to DIN specifications 8.9 1.8 5.4 Drawing-No.: 6.541-5085.01-4 Issue: 1; 15.04.10 22104 Rev. 1.
PAGE 6
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors TAPING DIMENSIONS FOR VBPW34FAS in millimeters 21730 TAPING DIMENSIONS FOR VBPW34FASR in millimeters 21731 Rev. 1.2, 24-Aug-11 Document Number: 81127 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 7
VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors REEL DIMENSIONS FOR VBPW34FAS AND VBPW34FASR in millimeters 21732 SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.
PAGE 8
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