Datasheet

VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
1
Document Number: 81128
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VBPW34S and VBPW34SR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 7.5 mm
2
sensitive area
detecting visible and near infrared radiation.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
Radiant sensitive area (in mm
2
): 7.5
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 65°
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
High speed photo detector
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
21733
VBPW34S
VBPW34SR
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ0.1 (nm)
VBPW34S 55 ± 65 430 to 1100
VBPW34SR 55 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VBPW34S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
VBPW34SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient R
thJA
350 K/W

Summary of content (8 pages)