Datasheet

VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
2
Document Number: 81128
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
11.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
50 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
45 55 μA
Angle of half sensitivity ϕ ± 65 deg
Wavelength of peak sensitivity λ
p
940 nm
Range of spectral bandwidth λ
0.1
430 to 1100 nm
Noise equivalent power V
R
= 10 V, λ = 950 nm NEP 4 x 10
-14
W/√Hz
Rise time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
r
100 ns
Fall time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
f
100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative
Reverse
Light Current
T - Ambient Temperature (°C)
amb
ra rel