Datasheet
Preliminary
VLHW4400-....
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 31-May-12
1
Document Number: 82565
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrabright White LED, Ø 3 mm
DESCRIPTION
The VLHW4400 is a diffused, untinted 3 mm LED for high
end applications where supreme luminous intensity is
required.
These lamps utilize the highly developed ultrabright InGaN
technologies.
The lens and the viewing angle is optimized to achieve best
performance of light output and visibility.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
•Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 30°
FEATURES
• Diffused, untinted lens
• Utilizing ultrabright InGaN technology
• High luminous intensity
• Luminous intensity and color categorized for
each packing unit
• ESD-withstand voltage: up to 2 kV according to
JESD22-A114-B
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Interior and exterior lighting
• Outdoor LED panels
• Instrumentation and front panel indicators
• Replaces incandescent lamps
• Light guide compatible
19222
PARTS TABLE
PART COLOR
LUMINOUS INTENSITY
(mcd)
at
I
F
(mA)
COORDINATE
(x, y)
FORWARD VOLTAGE
(V)
TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
VLHW4400-JKPL Cool white 450 800 1125 5 -
0.33,
0.33
- 2.6 2.8 3.2 InGaN and converter
VLHW4400-QPMM Warm white 450 800 1125 5 -
0.44,
0.41
- 2.6 2.8 3.2 InGaN and converter
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
VLHW4400
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
DC forward current I
F
20 mA
Peak forward current at 1 kHz, t
p
/T = 0.1 I
FSM
0.1 A
Power dissipation P
V
85 mW
Junction temperature T
j
+ 120 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 85 °C
Soldering temperature t ≤ 5 s T
sd
260 °C
Thermal resistance junction/ambient R
thJA
400 K/W