Datasheet
VLMRGB343..
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 18-Sep-14
1
Document Number: 81742
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Multi SMD LED RGB
DESCRIPTION
VLMRGB343.. tricolor LEDs is a high brightness device
designed for demanding applications in efficiency and
reduced space. An ideal device in emphasizing visual
effects, advertisement, decoration as well as general
backlighting needs.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-4
• Product series: RGB
• Angle of half intensity: ± 60°
FEATURES
• High brightness tricolor SMD LED
• RGB individual control
• Compact package outline
• Black surface
• Qualified according to JEDEC
®
moisture
sensitivity level 2
• Compatible to IR reflow soldering
• AEC-Q101 qualified
• ESD-withstand voltage: up to 1 kV according
to JESD22-A114-B
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Wide range of accent and decorative lighting
• Displays: full color message and displays video boards
• Consumer appliances: backlight LCDs, PDAs, TVs
• Industry: white goods such as ovens, microwaves, etc.
Note
• Reel comes in a quantity of 2050 units per reel. Luminous intensity is measured with an accuracy of ± 11 %. All electrical and optical data
are measured at room temperature of 25 °C.
20777
PARTS TABLE
PART COLOR
LUMINOUS
INTENSITY
(mcd)
at I
F
(mA)
WAVELENGTH
(nm)
at I
F
(mA)
FORWARD
VOLTAGE
(V)
at I
F
(mA)
TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
VLMRGB343-ST-UV-RS
Red 140 - 285 20 618 625 628 20 - 1.8 2.45 20 AlInGaP
True green 285 - 560 20 521 526 536 20 - 3.7 4.25 20 InGaN
Blue 100 - 200 20 465 470 475 20 - 3.6 4.25 20 InGaN
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
VLMRGB343.., RED
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Forward current I
F
30 mA
Reverse voltage V
R
12 V
Power dissipation P
tot
75 mW
Junction temperature T
j
125 °C
Surge current
t
p
< 10 μs, duty cycle = 0.005
I
FM
1000 mA
Thermal resistance junction/solder point
1 chip on
3 chip on
R
thJP
260
420
K/W
Thermal resistance junction/ambient
1 chip on
3 chip on
R
thJA
480
770
K/W
Operating temperature T
amb
-40 to +100 °C
Storage temperature T
stg
-40 to +100 °C
Forward voltage 20 mA V
F
1.8 to 2.45 V