Datasheet

VOL617A
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 13-Oct-15
2
Document Number: 82424
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Power dissipation P
diss
100 mW
Forward surge current t
p
< 10 μs I
FSM
1.5 A
Forward current I
F
60 mA
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
80 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
p
/T = 0.5, t
p
< 10 ms I
C
100 mA
Power dissipation P
diss
150 mW
Junction temperature T
j
125 °C
COUPLER
Total power dissipation P
tot
250 mW
Storage temperature range T
stg
-55 to +125 °C
Ambient temperature range T
amb
-55 to +110 °C
Soldering temperature
(1)
≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 5 mA V
F
- 1.16 1.5 V
Capacitance V
R
= 0 V, f = 1 MHz C
O
-45 pF
Reverse current V
R
= 6 V I
R
- 100 μA
OUTPUT
Collector emitter leakage current V
CE
= 10 V, I
F
= 0 A I
CEO
- 10 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
-7-pF
COUPLER
Collector emitter saturation voltage I
C
= 1.0 mA, I
F
= 5 mA V
CEsat
- 0.25 0.4 V
Coupling capacitance f = 1 MHz C
C
-0.25- pF
0
50
100
150
200
250
300
0 20 40 60 80 100 120
P
tot
- Total Power Di
ss
ipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode