Datasheet

VOL617A
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 13-Oct-15
4
Document Number: 82424
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Fig. 4 - Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 6 - Forward Current vs. Forward Voltage
Fig. 7 - Collector Current vs. Collector Emitter Voltage
Fig. 8 - Collector Emitter Current vs. Ambient Temperature
Fig. 9 - Collector Current vs. Collector Emitter Voltage
0 25 50 75 125
0
50
100
150
200
300
T
si
- Safety Temperature (°C)
150
100
250
Phototransistor
P
SO
(mW)
IR-diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
0.1
1
10
100
0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
amb
= 110 °C
T
amb
= 75 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 55 °C
0
5
10
15
20
25
30
35
40
45
50
55
0 1 2 3 4 5 6 7 8 9 10
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (V)
I
F
= 30 mA
I
F
= 35 mA
I
F
= 1 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 25 mA
0.001
0.01
0.1
1
10
100
1000
10 000
I
CE0
- Leakage Current (nA)
T
amb
- Ambient Temperature (°C)
I
F
= 0 mA
V
CE
= 40 V
V
CE
= 24 V
V
CE
= 12 V
-60 -40 -20 0 20 40 60 80 100 120
0
5
10
15
20
25
30
0 0.1 0.2 0.3 0.4
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (V)
I
F
= 1 mA
I
F
= 25 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA