Datasheet

VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 05-Apr-12
1
Document Number: 94000
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
Hyperfast recovery time
Low forward voltage drop
175 °C operating junction temperature
Low leakage current
Designed and qualified according to
JEDEC-JESD47
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
15 A
V
R
300 V
V
F
at I
F
1.25 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Single die
Anode
1
3
2
Cathode
Base
cathode
TO-220AC
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
RRM
300 V
Average rectified forward current I
F(AV)
T
C
= 142 °C 15
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 140
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 300 - -
V
Forward voltage V
F
I
F
= 15 A - 1.05 1.25
I
F
= 15 A, T
J
= 125 °C - 0.85 1.00
Reverse leakage current I
R
V
R
= V
R
rated - 0.05 40
μA
T
J
= 125 °C, V
R
= V
R
rated - 12 400
Junction capacitance C
T
V
R
= 300 V - 45 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH

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