Datasheet

VS-15ETH03PbF, VS-15ETH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 05-Apr-12
4
Document Number: 94000
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd +Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
120
130
140
150
160
170
180
DC
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
2
4
6
8
10
12
14
16
18
20
22
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
100
10
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
I
F
= 15 A, T
J
= 25 °C
I
F
= 15 A, T
J
= 125 °C
100
1000
10
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
I
F
= 15 A, T
J
= 25 °C
I
F
= 15 A, T
J
= 125 °C